Dear Sir. Concerning your issue about the reference sample for conductive atomic force microscopy (CAFM). A natural application of CAFM imaging is the characterization of material structures where charge-transport properties vary on the nano- to microscales and are correlated to sample morphology. Morphology-transport relations often account for complex macroscopic material properties and are important for improvements in microdevice performance. Silicon is by far the most widely used material in microelectronic applications. Rezek et al. have used CAFM in order to study the nucleation of Si microcrystallites in a layer of hydrogenated microcrystalline silicon as a function of growth conditions. The juxtaposition of the two draws a parallel between the morphology of the Si surface and its composition; most large raised hillocks are identified to be poly-Si (and therefore more conductive) while the rest of the sample (amorphous Si) has a lower conductivity. The dual section shows some exceptions from this general rule, however: while the larger hillock at x = 600-700 nm is insulating, the small hillock at x = 500-550 nm is highly conductive, indicating the presence of a newly nucleated poly-Si crystal. A number of new materials are also benefiting from this experimental approach. In conductive polymer blends, for example, structure is self-organized into molecular scale sheets. Work in our group has recently shown this structure to be well correlated with charge injection efficiency at the polymer surface. Large scale CAFM images of a conductive polymer blend surface (PEDOT-PSS) reveal the presence of regions where charge injection is highly efficient, and regions where charge injection is inhibited (102 -103 fold lower). Here the current data were superimposed onto the 3D plot of the surface as a color scale. I think the following below links may help you in your analysis: