I need to etch Al2O3 (15nm) on top of ZnO (50nm) without hardening the photoresist and without etching the ZnO below using the available plasma: Ar, O2, CF4, and SF6.
Normal chlorine based etching causes hardening of the photoresist that is very difficult to remove with developer.
Does anyone have a good idea of where to start for a proper etch recipe?
Thomas Breuer, I have tried that but the O2 plasma damages the exposed ZnO underneath the etched Al2O3, so I cannot use ashing to remove the remaining photoresist, I need to use acetone.
Unfortunately there are multiple different structures that could be damaged, that is why it is important to use a gentle photoresist strip after any etching.
Thanks for your input, it's much appreciated.
It's a long time since I did any of this, and even then our 1-2nm Al2O3 layer was employed as an etching barrier with CF4. However, if you can etch Al2O3 then the simplest approach might have to be iterative to determine your Al203 etch rate for a given, pressure, power and etchant mixture. Rather laborious I'm afraid and even then still dependent on tight process control, repeatable etch rate and a stop watch.
Thank you Martin, I was hoping I wouldn't have to do a major study, but it looks more and more like it. The funny thing is, there is a recent paper ( Article Improved Performance of Zinc Oxide Thin Film Transistor Pres...
) that has an etch recipe for Al2O3 on ZnO using CF4 and CHF3, but unfortunately our RIE tool doesn't have CHF3. So we have to make due with what we have at the moment.Thanks again!
Hello Mr Pavel i`m student of University in korea and i am progressing reserch almost same with you, Before i tell my opinion, i give you sorry for my bad english skills..please forgive me.
I want Etch Al2O3(15nm) which is on the IGZO(15nm) , I also can not use chlorine-based etch gas because of IGZO. I want to tell you about CHF3 GAS is not good choice for your sample. because Metal oxide include ZnO, IGZO and so on,, active layer also will be effected by H atom. I will use CF4 GAS and additive gas O2, Ar
. i will use ICP Etcher to gain Etching selectivity of al2o3 and IGZO
I want to contact you . if you are fine. Could you give me an e-mail [email protected]?
hello pavel, i would like to know if could you etch al2O3 without hardening the photoresist and without etching the ZnO below with CF4 and Sf6 ?
i have also RIE-System and i want to etch Al2O3.
thanks in advance
I think burning PR by oxygen and then Hydrogenation to adjust ZnO can be a good option if the quality of ZnO is good enough.
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