So what I did, was that I have a Si-wafer with a 100 nm thick SiO2. In an ICP reactor I induced for 1 second C4F8 and Ar (1:1), after that i evacuated the chamber with pure Ar for 20 s. I expected to grow a polymere film but instead the SiO2 completely disappeared and a thin FC film was created. The source power was 1000 W but no Bias was applied. In all the literature i found so far either atleast -2 V Bias was applied or SF6 was used to etch. Im working on my thesis and a little help to explain what happened would be really appreciated.