We use reactive sputtering process to make aluminum nitride film, and want to make c-axis aluminum nitride film on a silicon substrate, but the crystal orientation cannot be seen with XRD
process parameters:
Target : Pure Aluminum
Source : DC or RF
Power [W] :150~300W
Substrate bias [V] :No bias
Pressure [mTorr] :1mTorr
Gas composition Ar/N2 [sccm]: 12/8
Substrate temperature :RT
We tried several methods:
1.more low pressure
2.high power(But more than 200W will be Target poisoned)
Dear Chi Chungkai , your process parameters look like correct, matching some of the collection collected in the following paper by Abid Iqbal and Faisal Mohd-Yasin :
Article Reactive Sputtering of Aluminum Nitride (002) Thin Films for...
You could look for some alternative conditions, to do so the authors include a diagram where they explain the importance of each parameter to achieve a good AlN film.
Hope it helps.
here attached some papers concerning this compound using dc sputtering
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