We use reactive sputtering process to make aluminum nitride film, and want to make c-axis aluminum nitride film on a silicon substrate, but the crystal orientation cannot be seen with XRD

process parameters:

Target : Pure Aluminum

Source : DC or RF

Power [W] :150~300W

Substrate bias [V] :No bias

Pressure [mTorr] :1mTorr

Gas composition Ar/N2 [sccm]: 12/8

Substrate temperature :RT

We tried several methods:

1.more low pressure

2.high power(But more than 200W will be Target poisoned)

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