Is it possible to etch SiO2 with C4F8 and Ar in an ICP Reactor but without applying any bias?

So what I did, was that I have a Si-wafer with a 100 nm thick SiO2. In an ICP reactor I induced for 1 second C4F8 and Ar (1:1), after that i evacuated the chamber with pure Ar for 20 s. I expected...

04 April 2018 5,195 1 View