In sputtering the substrate is not subjected to the accelerated ions. It is subjected to the sputtered atoms from the traget which are normally flow by diffusion from the target to the substrate which in this case the perovskite film. In addition it is a low temperature deposition process.
Then from where does the damage of the substrate film come?
Whenever the substrate is far from the plasma ions, it will not be subjected to damage by accelerated ions.
Thank you Dr. Abdulhalim Zekry for your response. However, i got two other similar responses from PSC fabrication guys. However, i am not sure about the precise answer, if someone can give some published paper on this question, it will be more beneficial.
It is clear that the plasma is not confined in the discharge region but positive ions can spread out of this region arriving to the target where they collide with it leading to damage in the substrate and in the deposited film.
The damage of substrate can appear if the plasma power is very high in RF sputtering. Indeed, during the positive cycle, the ions sputtred the target. however, during the negative cycle the ions can damage the substrate if the ions have enought energy (in terme of kinetic energy) to reach and damage the layer on the substrate.