I know using UPS and XPS I can find the energy information of the material. The Work Function = incident energy - (secondary electron cutoff - fermi level). However I am not so clear how to find the valence band energy.
Also which is better, for UPS and XPS. It seems to me UPS is more commonly used in this. But I have seen that the information of depth of XPS is up to 10nm, while UPS is only about to 3nm. Does it means that measuring a film thicker than certain level, say 5nm, it is better to use XPS.
Moreover, If I want to determine the energy band of transition metal oxide system. Is there any special attention to be made for the equipment setup?