I made microchannel on silicon wafer by fiber laser, but some substance was formed above the channel surface. I suppose this as silicon dioxide, and want to remove this from silicon channel.
But I can't use HF.
Then how can I successfully remove sio2 from si wafer? I don't want silicon wafer to be etched out as far as possible.
Dear Sangguk Kwon,
Here it is:
Hydrofluoric acid (HF) is used to remove native silicon dioxide from wafers. Since it acts quickly, one needs to only expose the wafer for a short time (“dip”). HF is a dangerous chemical and protective gear must be worn when using it, in particular, neoprene or thick nitrile gloves and eye protection must be worn.
Dear Sangguk Kwon,
You may want to review some additional info as well:
How do you remove silicon oxide from a wafer surface?
The standard procedure for attempting to remove any surface oxide involves various wet etches, generally concluding with a dip in dilute HF. However, exposing a clean wafer to the atmosphere for even a short time allows some oxide to regrow, since silicon is an extremely reactive material.
How do you remove silicon dioxide?
A method for removing a portion of a silicon dioxide layer is to utilize a diffusion-limited etch. Such etch will stop after some of the silicon dioxide layer is removed, and before an entirety of the silicon dioxide layer is removed.
https://www.researchgate.net/post/HOW-TO-REMOVE-OXIDE-LAYER-FROM-Si-SUBSTRATE-FOR-CV-MEASUREMENT
Try this, it may or may not work:
Alternatives to Hydrogen Fluoride for Photoelectrochemical Etching of Silicon - Journal of The Electrochemical Society, 146 (12) 4485-4489 (1999)
https://citeseerx.ist.psu.edu/viewdoc/download?doi=10.1.1.854.4846&rep=rep1&type=pdf
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