I conducted an I-V curve measurement for my SWCNT FET and received a very odd result that I can't understand.
The measurement was done with DI water as gate dielectric under gate voltage between -0.5V to 0.5V (single gate potential for each curve).
the metal connectors are made out of Ti-Au.
Dear Or,
the I-V-characteristics seem to show an interesting behaviour. I am no specialist for carbon nano tubes but I am interested in properties of nanostructures.
Provided that your experiment is reproduceable, I see 2 or 3 properties which must be discussed:
1. The I-V-curves saturate for high currents or the slope will be even negative. I assume, the resistance decreases with increasing power, e.g. the temperature increases. This is typically for semiconductors.
2. The FET works well. The curves shift parallel if Vg changes as expected.
3. You have "oszillations" of your curves. The positions of the local minima depend on the occupation level (I). In steps of nearly 0,3 µeV you observe a new level.That means (if these oscillations are real) that the energy of the electrons in the band is responsible for this behaviour. I assume, the "special" density of states in the nanostrucure oscillates with e*V. The fir tree geometry of the one dimensional density of states (occupation level (I) versus energy (eV)). could be responsible therefore.
But the last point is perhaps more my phantasy than reality. This must be more exactly investigated.
With Regard
R. Mitdank
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