I'm currently conducting research on synthesizing graphene via Chemical Vapor Deposition (CVD) (bilayer) for integration with P-type silicon to form Schottky junctions. My aim is to explore the properties of these junctions, particularly when formed on highly doped P-type silicon and porous substrates.
Recently, I performed capacitance-voltage (C-V) measurements to determine the doping concentration (Nd) of the silicon substrate using the Mott-Schottky plot method. However, I encountered challenges in interpreting the results.
Specifically, when plotting 1/C^2 against the applied voltage (V), I observed a deviation from the expected linear behavior across all measurements, conducted at frequencies ranging from 10 kHz to 1 MHz. This deviation was consistent for both the P-type silicon samples and those on the porous substrate.
I've attached graphs illustrating this behavior for reference.
I am seeking assistance interpreting the observed deviations and potential solutions or explanations.
Any insights or suggestions on how to address this issue would be greatly appreciated.
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