If you are trying to deposit multi layers of TiAlN and CuO, then it must be possible.For this you should have five precursor lines for each element. Also suitable precursors should be identified.
Regards.
Correction. I mean one precursor line for each element. Total five lines.
Is it possible to carry out this process with such deposition system (see attached file)?
If A1 to D2 are precursor containers/bubblers then it must be possible to deposit the material you suggested.
regards,
Dear Aleksandr,
It may be possible with the Picosun-system you show a picture of.
You would need somewhere to take the ammonia (D2?) and you would would need to load TiCl4 in your Picohot200, but you will not get cooling, and TMA in C1, then you can use your Picohot300 for Cu(hfac)2. You must first check that there is no interlock between the D1 and D2 and that D2 is certified for NH3.
Also, do not hesitate to contact us (Picosun) for process support, we can give you some more advice directly.
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