Hello all:
If someone have some experience on Hall Effect measurements on semiconductor thin films, with materials such as CdS, PbS, ZnO, etc..
My questions is:
I'm trying to measure the electronic/hole mobility (mu) and the free carrier's concentration (n) with an ECOPIA HMS-3000.
But, since the semiconductor thin film materials I'm trying to measure are such which its carriers concentrations are between E^13 < n < E^16, i.e. non-degenerated semiconductors at all, even I would think these are low levels of free carriers concentrations ...
I don't know whether I can get reliable measurements with a magnetic field of 0.55 T ?
Could this magnitude of B may be an issue? Or, It would n't affect much to the error of the measurements
I'll appreciate it !
Regards,
Hello Mr. Hernandez,
To get a reliable measurement with HMS 3000 system, first, you have to do symmetric I-V measurement (from negative current to positive current, and set step number bigger than 2) to be sure the contacts are ohmic. And be sure your sample is square. If I-V measurement gives a linear graph, it is ok to do Hall measurement. Also, based on my experience, it is useful to prepare as thick a sample as possible for Hall effect measurement of highly resistant materials. This will increase the reliability of the measurement as it will reduce the total resistance of the sample. And yes, it is reliable to measure non-degenerated semiconductors as you do it right.
Dear Huseyin Kaan Kaplan thank you for the advices, just two questions,
I can see the site for entering the step number in the 1st. screen, the one for measuring the I-V curves first, but what does this parameter (the step number) mean exactly?
And second , can you tell me something about the magnitud of the magnetic field?, in relation with the reliability of the Hall Effect measurements for the carriers' mobility and carriers' concentration ?
Thank you !
Go through the attached article:
Rivnay, J., Inal, S., Collins, B.A., Sessolo, M., Stavrinidou, E., Strakosas, X., Tassone, C., Delongchamp, D.M. and Malliaras, G.G., 2016. Structural control of mixed ionic and electronic transport in conducting polymers. Nature communications, 7, p.11287.
Dear Franklin Uriel Parás Hernández ,
The step number is a parameter of the measuring accuracy of the I-V measurement, that is, how many different values will be measured in the current range you set with the step number. For example, if you set current range from -1uA to 1uA and step number to be 2 it will measure I-V values for only the inital and final current values and the result will not make sense.
I think the magnitude of the magnetic field is sufficient for the accuracy of the measurement results. I reached this conclusion as follows: I measured with both commercially available n- and p-type silicon wafers and found that the values I measured were almost identical to the actual values.
I hope I could help.
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