My background is chemistry and now encounter question in semiconductor physics.
I use Polyethylene oxide (PEO) to modify heavily doped silicon. Based on UPS data, I find that the the work function (WF) of silicon continuously decreases while the the valence band edge remains unchanged if I increase the PEO thickness (of course thin enough and below certain value). This data means that the ionization energy decreases also.
The mechanism that PEO decreases WF is due to the formation of surface dipole.
Now comes the questions. the decrease ionization energy contradict that the ionization energy is the intrinsic property of material and should remains unchanged.
I highly appreciate your valuable help.