Can a layer of the graphene be grown on SiO2 by thermal evaporation method? Please suggest some solution root by which graphene may deposit on the ZnO and SiO2? Please also suggest some etchant which can remove graphene from the ZnO without affecting the ZnO layer?
Graphene could be grown on SiO2 by CVD method, but I don't think it would be possible by thermal evaporation.
It is not possible for graphene is highly thermal conductive hence a very high temperature is required at this temperature SiO2 deformed.What's more a when temperature is enough high graphene also deformed and without a catalyst on SiO2 it is not possible for carbon to form 2D structured graphene
To the best of my knowledge, there is no method available providing direct growth of graphene on SiO2
If you want graphene e.g. single layer of graphite on SiO2 and ZnO, grow graphene on Cu by CVD technique and transferred on those substrates. Or if you are happy with nanographite or few layer graphene, you can go with PECVD growth. Using PECVD, you can directly grow few layer graphene on SiO2 and ZnO.
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