Generally, responsitvity of different devices varies in the range of 0.3-1.2 or so much but in the case of the Schottky diode it was much greater. I can only give some theoretical explanation for this large responsivity. Can the external efficiency of a detector be larger than this one or even one hundred percent effective?
Schottky diode is a non-linear device, with a large slope in its I-V characteristic at its pinch-on/off threshold when biased properly. This must be the reason for its large responsivity.
It is referred as junction of active layer closer to the surface support to high energy edge absorption and extend towards the semiconductor inside supports longer edge absorption, thus enhance the responsivity
Due to existence of barrier in schottky contacts, the injection of charge carrier to the circuit is very hard. for example in ohmic contact, there is no barrier or a very low barrier and electron can easily move, so the responsivity is small.
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