I have analysed three particular Schottky contact and found that barrier height of the first diode is smaller than the other saturation current of first diode is larger. The forward current of the first current is smaller than the second one. The saturation current of the second diode is smaller than the first this is correlation with barrier height. When we go for measurement of the third device the saturation current and barrier height calculated. It was found that saturation current is larger than the these two device and barrier height is also smaller but as we observe that the forward current larger for third case. Please see the graph in doc file. Please tell this is reasonable observation or not.
Can you improve the graph (i.e. add the values for V and I and indicate which diode is which)?
Hello Aniruddh;
could you please rearrange your questions, and your graph? There are many factors affecting the value of current, even you have the same Schottky contacts, coz to some limit they are NOT identical. Please read this paper Semicond. Sci. Technol. 27 015006.
The key parameter is the ideality factor. Effective barrier heights are likely to be different for diodes with differing IFs unless appropriate models are used to account for parasitic effects: surface roughness, interfacial oxide etc
You should look at Rhoderick's book and papers, also the seminal papers by RT Tung
your problem is not clearly understood by this explanation and graph .......... write it in a simple way...............
In my opinion the series resistance decreases this cause the current increase for these devices
I would especially encourage you to read the seminal papers by R
1) Ray T. Tung (he is on RG, originally from Bell Labs, now at City University of NY - Brooklyn College) which Steve Hall mentioned here above, and
2) by Johannes Friso Vander Veen, (also on RG, originally affiliated with FOM-Instituut, Amsterdam, now Prof. ETH-Zürich at the Paul Scherrer Institut · Swiss Light Source (SLS)
3) These papers show that homogeneity & uniformity of crystallography of initial surfaces, AND control and homogeneity of the chemical species of bonds at the interfaces are key in controlling the SB height. I attach one of my own papers reviewing various methods to control surfaces homogeneities and adsorbates, which may help you in your lab.
1) I would recommend to read the following recent paper by Ray Tung:
• "Effect of metal interaction on the Schottky barrier height on adsorbate-terminated silicon surfaces" by Y. Li, R. Long, R. T. Tung. Applied Surface Science 11/2013; DOI: 10.1016/j.apsusc.2013.07.162
• R. T. Tung, K. K. Ng J. M. Gibson, A. F. J. Levi Physical review. B, Condensed matter. 05/1986; 33:7077-90. DOI: 10.1103/PhysRevB.33.7077
2) I attach a paper by Friso Vander Veen
Article The formation of ordered, ultrathin SiO2/Si(100) interfaces ...
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