ITO is smoother than FTO and can be processed in low temperature. The ZnO can be annealed at 100-130 degree C hence good and cheap way to use the ITO. The ITO resistance will increase as the annealing temperature increase and hence not suitable for inert and high temperature (
I agree with Muhamad, electrical properties of ITO films are sensitive to operation conditions .
If the question is as to why ZnO is needed as opposed to devices without a ZnO layer, then one of the reasons is to form an electron transport (hole blocking contact). Planarisation of the contact is another reason.
Thank you everyone for adding knowledge.
Using thin film of ZnO OR using ZnO NANOPARTICLES instead. Which would be more useful for increasing EQE or IQE??
P.S.: In recent CQDPVs , researchers are using ZnO NPs.
ZnO as ETL and ZnO as TCO ??? Why ZnO as both TCO and ETL Imalka Jayawardena Hassan Alshamsi
Both doped and un-doped ZnO that is widely used generally doesnt have thecrequired sheet resistance to be used as a TCO. To use it as such, youd need to dope it to a very high level so that it behaves like a degenerate semiconductor (much like through indium doping of tin oxide). More often than not, the Fermi level of ZnO is at thd right level electton extraction in for example, organic solar cells, hrnce their use as an ETL.
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