The ZnO thin films prepared at different substrate (TS =50 to 350 degree centregreat) temperature in RF magnetron sputtering system with other conditions remain same. we observed that the deposition rate of ZnO thin films are increased with increasing the substrate temperature. Can any one tell me the cause of this phenomena?
This is a typical situation for all ion-assisted etch processes.
Firstly, the material becomes more soft at increased temperatures, this means that ions are more easily extracting atoms/molecules from it.
Secondly, somewhat similar but still a little bit different mechanism: an increased lattice temperature means that its atoms are 'vibrating' with an increased amplitude, therefore at the same ion energy it's more probable for the atom to leave the lattice during the ion bombardment.
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