Greetings, fellow researchers.

Lately I've been trying to grow single crystal germanium thin film (100 nm thickness) on (100)silicon wafer, the thin film crystalline will be rectified using high-resolution rocking curve of Ge(400) peak, using Bruker Advance D8, CuKa1(1.5406A), witch should locate at 66 degree under theta-2theta scan...

How ever, during quality check of our commercial single crystal silicon wafer, I've found that naked silicon wafer already reflected x-ray at 2theta=66 degree(see picture below), and under such circumstances rocking curve of thin film germanium would be totally useless, since their peaks overlaps. I'd like to know the cause of the weird 66 degree signal of naked silicon wafer, so that further experiment could be organized.

Possible reasons of this anonymous peak includes:

1. Under-filtered x-ray source: not quite possible, since CuKa2 would reflect at 2theta=69.7 degree, CuKb would reflect at 2theta=60 degree, none of them locates at 66 degree.

2. Preferred oriented SiO2 native oxide: unlikely, since native oxides of Si are often very thin (less than 30 nm)and present amorphous characters; although SiO2 (300) diffraction angle is about 65.75 degree, close to 66.

3. Signal from sample holder: could be a reason, but the naked silicon wafer sample is large(2cm*2cm) and thick(600 micron thickness), therefor also unlikely.

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