By definition, a catalyst enhances a reaction, so your material would have to enhance the reaction the smallest possible amount. It could not depress or poison the reaction as it could not be a catalyst then. Can you explain the point of your question?
In CVD growth of graphene, catalyst is actually the substrate on which you grow graphene. If some catalyst doesn't work, you may not get the graphene.
Moreover, if you want to deposit graphene with maximum defects, you can do it by changing the experimental conditions. The concentration of hydrogen gas can etch the graphene from catalyst/substrate. You can also use this technique to get your desired growth.
The metal catalysts used for graphene growth (Cu, Ni, Pt, Pd, Ir, Fe,...) all have different catalytic power and C solubility. Depending on the substrate you pick, you'll have different graphene growth. However, there are many other parameters playing a role in growth of graphene (ex-situ catalyst preparation, thermal treatment prior to graphene growth step and CVD growth conditions). With the best catalyst, you can still get a graphene sheet containing defects if you don't use an appropriate CVD protocol.
If you want defect, it is always better to start with a controllable growth and then introduce defects with plasma or thermal treatment. In that way, at least, you have a reference. If you start with a crappy graphene for which you cannot distinguish the number of layers or any insight of crystallinity, it will be tricky to characterize it, even with common techniques like SEM, Raman, TEM or optical microscopy when transferred on SiO2.