Dear all,
I want to grow SiO2 on Stainless steel thin film by sputtering. After annealing, there is diffusion of the substrate to SiO2. I'd would like to ask if anyone has experience with this issue. If so, how do you recommend controlling the quality of SiO2 during the deposition. I should say, I used O2 during the deposition but the quality of the SiO2 was not really good.
Thanks for your time,
Parsa
Is it necessary to do annealing (in your work) after deposition of silicon dioxide by sputtering? If you can mention the reason for post-deposition annealing, the answer to your question may become simpler. You may contact me at: [email protected];
Sudhir Chandra, Professor, IIT Delhi
We generally use reactive O2 gas with a Si target in a PVD Chamber. I beleieve that you would also find many examples of doing that with CVD.
thank you so much. I will try to using your suggestion and I will let you know the results.
Dear all,
I deposit Si2O by RF. the power was 100 and I apply O2 with 12cc/min during the deposition. then I annealed at 800'c for 10 hours and I got Si2O layer with high quality. I write this Msg to let you know the result. I hope, it can be useful for all of them.
thank you so much for your helps and your recommends.
All the best
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