Currently, there is no report of ionization percentage for dopants in n-type and p-type material from moderate non degenerate to high degenerate dopants considering the band non parabolicity effect on density of states of effective masses for materials such as Ge, 2D materials, GaAs, GaN, other III-V materials, SiC, Diamond, AlN, Graphene, hexagonal boron nitride, beta-Ga2O3. These ionization percentage have a trend versus doping values and software such as quantum ATK of Synopsys, DFT, full band 3D quantum simulation are inaccurate as experimental values need to be measured for free carrier density from ionization percentage and analytical equations have to be developed. So far, no researchers in the institutions around the world have derived this ionization percentage in these material as a function of dopants particularly for the case of the degeneracy induced non parabolicity effect on carrier ionization.

So, the impetus for semiconductor professionals and researchers has to experimentally calibrate their software simulated parameter values such as free carrier density and derive a sequence of semi-analytic equations to compute the ionization percentage in these materials for T = 300 K which can be precisely quoted when in future, textbooks for these materials need to be compiled.

Sincerely,

Dr. Nabil Shovon Ashraf

Currently unaffiliated as a faculty with any university in Dhaka, Bangladesh since May 2022

Dhaka, Bangladesh.