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Questions related from Nabil Shovon Ashraf
I asked this question before and explained it in the body of the question analysis. In this question I would like to share one perspective where tunneling based transport might oversee drift based...
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Today I found from an article that cryogenic temperature extends partial discharge inception point in high voltage insulation failure. Not too cryogenic but substrate T at 100 K to 300 K improves...
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I see a plethora of research publications that use non-exact values of effective masses for silicon for both electron and hole at T = 300 K and effective density of states for electron and hole...
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From Donald Neamen's book on " Semiconductor Physics and Devices (4th edition)", page 113 quotes Nc and Nv values to be 2.8 x10^19/cm^3 and 1.04 x10^19/cm^3 for electron and hole effective density...
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