Nabil Shovon Ashraf

7 Questions 118 Answers 0 Followers

Questions related from Nabil Shovon Ashraf

What are the Ionization percentage of dopants in Ge, GaAs, GaN, other III-V materials, SiC, Diamond, AlN, Carbon Nanotube, Graphene at T = 300 K?

Currently, there is no report of ionization percentage for dopants in n-type and p-type material from moderate non degenerate to high degenerate dopants considering the band non parabolicity...

16 May 2025 8,151 0 View

Seeking possible perspective of tunneling based transport in atomically long single n-type silicon or other material ?

I asked this question before and explained it in the body of the question analysis. In this question I would like to share one perspective where tunneling based transport might oversee drift based...

30 March 2017 7,269 10 View

Low temperature operation or cryogenic operation benefits from PD inception in HV engineering to higher speed/low leakage MOSFET operation. Comment?

Today I found from an article that cryogenic temperature extends partial discharge inception point in high voltage insulation failure. Not too cryogenic but substrate T at 100 K to 300 K improves...

04 August 2016 1,423 1 View

Selecting most precise value of effective masses mn and mp for Si and Nc and Nv for Si at T = 300 K.

I see a plethora of research publications that use non-exact values of effective masses for silicon for both electron and hole at T = 300 K and effective density of states for electron and hole...

01 January 1970 6,178 3 View

Proper calculation of intrinsic carrier concentration in silicon at 300 K with erroneous illustration in certain frequently followed textbooks.

From Donald Neamen's book on " Semiconductor Physics and Devices (4th edition)", page 113 quotes Nc and Nv values to be 2.8 x10^19/cm^3 and 1.04 x10^19/cm^3 for electron and hole effective density...

01 January 1970 3,251 12 View

Peta Hz (10^15 Hz) low noise amplifier (LNA)-a must to be designed hardware for quantum computer.

What is the highest qubit rate today's quantum computer can operate at? Can the latest quantum computer match the FLOP speed of Exa scale computing or 10^18 FLOPS switching rate? The answer is no....

01 January 1970 6,461 0 View

Accurate calculations of device and material parameters for n-FET and p-FET modeling and transport analysis.

I have composed a book published by Springer Nature in March 2025 titled "Parameter-Centric Scaled FET Devices-Physics Based Perspectives and Attributes". The book is apt as a must-read one by...

01 January 1970 4,542 2 View