Nabil Shovon Ashraf

4 Questions 105 Answers 0 Followers

Questions related from Nabil Shovon Ashraf

Seeking possible perspective of tunneling based transport in atomically long single n-type silicon or other material ?

I asked this question before and explained it in the body of the question analysis. In this question I would like to share one perspective where tunneling based transport might oversee drift based...

30 March 2017 7,177 10 View

Low temperature operation or cryogenic operation benefits from PD inception in HV engineering to higher speed/low leakage MOSFET operation. Comment?

Today I found from an article that cryogenic temperature extends partial discharge inception point in high voltage insulation failure. Not too cryogenic but substrate T at 100 K to 300 K improves...

04 August 2016 1,368 1 View

Selecting most precise value of effective masses mn and mp for Si and Nc and Nv for Si at T = 300 K.

I see a plethora of research publications that use non-exact values of effective masses for silicon for both electron and hole at T = 300 K and effective density of states for electron and hole...

01 January 1970 6,129 3 View

Proper calculation of intrinsic carrier concentration in silicon at 300 K with erroneous illustration in certain frequently followed textbooks.

From Donald Neamen's book on " Semiconductor Physics and Devices (4th edition)", page 113 quotes Nc and Nv values to be 2.8 x10^19/cm^3 and 1.04 x10^19/cm^3 for electron and hole effective density...

01 January 1970 3,197 12 View