i am using 2" AZnO target and depositing thin film using RF sputtering at 100 W and 0.5 mtorr. substrate temperature is provided at 200 C. Plasma ON/OFF at 0.5 mTorr and plasma is created around sputter gun area also. argon gas is used for sputtering process. is substrate temperature affects generation / sustainability of plasma?
Either there is some shorting between magnetron and its shield. Otherwise there will be some moisture in the process chamber. One more thing cover all the other insulated wires and inner side of the chamber should be well covered with Al foil.
A pressure of 0.5 mT is a very difficult condition to sustain any plasma (either RF or DC). To create enough ions & electrons to sustain the plasma you normally operate RF systems in the 5-10 mTorr range, so you are using an extreme condition. Even if you would apply RF-magnetron, to increase the residence time/path length of the electrons in the plasma, you would have sustaining problems at 0.5 mT pressure. Is it necessary for you to process at such low pressure? If not, raise the pressure to 7 mT and your problem is solved.
Thank you Gourab Das for replying. There is no moisture in process system and everything is covered.
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