Hello everyone! The 2DEG density of the under-gate region of conventional depletion-mode GaN HEMT can be obtained through C-V measurement. However, a junction capacitor (Cj) due to the Schottky metal/p-GaN junction is added in series with the AlGaN barrier capacitor (CAlGaN) in p-GaN gate HEMT. How to obtain the relationship between 2DEG density and gate bias in the under-gate area of p-GaN gate HEMT through experimental methods?