02 January 2024 0 5K Report

Hello everyone! The 2DEG density of the under-gate region of conventional depletion-mode GaN HEMT can be obtained through C-V measurement. However, a junction capacitor (Cj) due to the Schottky metal/p-GaN junction is added in series with the AlGaN barrier capacitor (CAlGaN) in p-GaN gate HEMT. How to obtain the relationship between 2DEG density and gate bias in the under-gate area of p-GaN gate HEMT through experimental methods?

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