Hello, I'm newbie to TCAD.
I wanna calculate Breakdown Voltage of AlGaN/GaN HEMT.
But, my code shows just saturation.
Could you please help me how to simulate Breakdown Voltage of my code?
And also, If I wanna see temperature of it. What models or outputs I have to add?
Use only those models that are necessary and sufficient to represent the desired phenomenon.
"SUBSTRATE" is a parameter that defines a lattice constant for strain calculations, so it should be specified on the GaN region (in your case), not sapphire.
IMPACT SELF should be specified in a separate line, not in MODELS, if I'm not mistaken.
In case of convergence problems some tricks may be needed, such as switching to current boundary condition, transient simulation or calculation with extended precision (80, 128, 160 or 256 bits).
- Badges
- Science method
- Similar topics
- Methodology
- Crystallography
- X-ray Diffraction