Kindly help me by providing the values of electronic properties (bandgap, electron and hole density of states, dielectric permittivity and electron and hole mobilities) of Niobium Nitride (NbN) at room temperature and cryogenic temperature application. It would be of great help for my study.
Subhranil Dey NbN band gap is metallic at room temperature, allowing free electron movement and electrical conductivity. At room temperature Because of the 4d Nb electrons, the material has a high electron density of states (DOS), strong plasmonic and superconducting characteristics, and moderate permittivity (5.2). Its electron mobility ranges between 200 and 300 cm2/Vs, impacting electrical conductivity.
Cryogenic temperature exhibits small bandgap, lossless electron pairing, superconductivity, reduced dielectric permittivity, increased electron mobility (up to ~10^4 cm²/Vs), and low hole mobility.
I'm looking for NQR properties of Niobium Nitride in various phase (crystal structure).
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