Hello,
I want to measure the optical band gap of CuS elaborated by deposition of sulfide ions on a copper substrate and leads to formation of CuS thin films. Is it possible to use a spectrophotometer V-730?
Dear Sir. Concerning your issue about the measurement of the optical band gap of CuS deposited on copper substrate. The copper sulphide (CuS) thin films were grown with good adhesion by spraypyrolysis deposition (SPD) on Ti, ITO and glass substrates at 200 °C. The distance between nozzle and substrate is 30 cm. The composition was prepared by mixing copper chloride CuCl2.2H2O as a source of Cu2+ and sodium thiosulfate Na2S2O3.5H2O as a source of and S2−. Two concentrations (0.2 and 0.4 M) were used for each CuCl2 and Na2S2O3 to be prepared and then sprayed (20 ml). The process was started by spraying the solution for 3 seconds and after 10 seconds the cycle was repeated until the solution was sprayed completely on the hot substrates. The structural characteristics were studied using X-ray diffraction; they showed covellite CuS hexagonal crystal structure for 0.2 M concentration, and covellite CuS hexagonal crystal structure with two small peaks of chalcocite Cu2S hexagonal crystal structure for 0.4 M concentration. Also the surface and electrical characteristics were investigated using Field Emission Scanning Electron Microscopy (FESEM) and current source device, respectively. The surface study for the CuS thin films showed nanorods to be established for 0.2 M concentration and mix of nanorods and nanoplates for 0.4 M concentration. The electrical study showed ohmic behavior and low resistivity for these films. Hall Effect was measured for these thin films, it showed that all samples of CuS are p- type thin films and ensured that the resistivity for thin films of 0.2 M concentration was lower than that of 0.4 M concentration; and for the two concentrations CuS thin film deposited on ITO had the lowest resistivity. This leads to the result that the conductivity was high for CuS thin film deposited on ITO substrate, and the conductivity of the three thin films of 0.2 M concentration was higher than that of 0.4 M concentration. I think the following below links and the attached file may help you in your analysis:
http://aip.scitation.org/doi/abs/10.1063/1.4948839?journalCode=apc
http://nopr.niscair.res.in/bitstream/123456789/14589/1/IJPAP%2050%289%29%20657-660.pdf
Thanks
Thank you Mr Isam Eldin for your interest, your explanations are comprehensive and could be useful if I want to study just characteristics of CuS thin films. but in my case I am studying how CuS films could be useful as a protective layers against copper corrosion. So I am looking for a way to measure its energy band gap Eg by keeping copper as substrat.
Thanks
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