I have deposited thin film of graphene oxide on corning glass and undoped Silicon substrates by dropcast method. I have kept at 50C for 3 hours to dry. Then I have annealed them at high temperature such as 800 C. As a result, the thin film turns into a layer of powder on the substrates.
Can any one explain why is it happening?
A possibility can be the evaporation of the external residues at elevated temperature, which were not properly filtered while finishing graphene oxide synthesis.
If you obtain the graphene oxide (GO) by Hummers method the material could have traces of alkali salts, that kind of impurities reduce thermal stability of graphene oxide, you could try to do a better wash of your GO powders in order to reduce the alkali impirities.
For glass substrate, I have cleaned with DI water acetone and propanol whereas for the Silicon, I have done with HF acid.
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