Hello everyone,
I am trying to simulate a vertical TFET using III-V compound semiconductor (GaSb) and Si forming a heterojunction. I am trying to include a nonlocal trap-assisted model for heterojunction such as TAT.NLDEPTH and TAT.RELEI in a model statement in order to address the defects caused due to lattice mismatch between GaSb and Si. Can you please explain how to correctly use TAT.NLDEPTH and TAT.RELEI in model statement. I have read about these two in SILVACO manual.
Multijunction solar cells (MJCs) based on III-V semiconductors constitute the state-of-the-art approach for high efficiency solar energy conversion. These devices, consisting of a stack of various solar cells, are interconnected by tunnel diodes. Reliable simulations of the tunnel diode behaviour are still a challenge for solar cell applications. In this paper, a complete description of the model implemented in Silvaco ATLAS is shown, demonstrating the importance of local and nonlocal trap-assisted tunnelling. We also explain how the measured doping profile and the metalization-induced series resistance influence the behaviour of the tunnel diodes. Finally, we detail the different components of the series resistance and show that this can help extract the experimental voltage drop experienced by an MJC due to the tunnel junction. The value of this intrinsic voltage is important for achieving high efficiencies at concentrations near 1000 suns.
the mechanisms involved in the tunnelling effect, that influence of the local and nonlocal TAT effects on the tunnel diode characteristics. It described the effects of trap concentration and effective masses on the peak current density and the degree to which the trap level modifies the low electric field response of the diode characteristic (the valley region). It developed a protocol for fitting the measured J-V curves and demonstrated the agreement between measurement and simulation. It explained a method for extracting the voltage drop that the MJC will experience due to the tunnel diode by separating the tunnel diode resistance into two components and by allowing the components to be calculated from the tunnel diode itself and from the metalization process. The reasonable fit between experiment and simulation data over the whole voltage range, which is particularly important for the case of MJCs. A nonuniform light distribution will cause the tunnel junctions inside solar cells to work at different regimes, necessitating a model that can perfectly reproduce the entire tunnel diode J-V curve.
Thank you Hadi Jabbar Alagealy sir... But I still did not understand what is the effect of TAT.NLDEPTH in the model statement. It is mentioned in a reference article that TAT.NLDEPTH is used to make the results more appropriate as the lattice mismatch and thermal co-efficient mismatch between two different materials can create defects in the heterojunction.
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