I fabricated a devices whose structure is "bottom electrode(ITO thin film sputterted)" - ZnO thin film - "top electrode(Ag thin film)". The thickness of ZnO thin film is about 200nm. The ZnO thin film is deposited by RF Sputtering with a ZnO target and Ag thin film is deposited by E-beam eva. When I measured the resistance the device whose structure is the same as mentioned above, the resistance is too low, ~10ohm or below. I think this might be there are some pinholes in the ZnO thin film, so there is a short circuit between the top and bottom electrodes. Is there any suggestions or helps to solve this problem? Will it be helpful to reduce the area of top and bottom electrodes to avoid the pinholes?
Dear Buil,
Firstly, how big area your device is? Reducing device area is definitely the way to have less pinholes.
Secondly, you could check the roughness of ZnO films before depositing Ag layer using AFM, so you can tell the quality of ZnO films. The deposition rate can affect the film quality.
Finally ITO coating could be very rough with some spikes. You may need to check the quality of your batch of ITO substrates. So far the best quality of ITO is the type for OLED applications. You may ask OLED grade ITO for your study.
Hope it helps.
Best wishes
Xuhua
Hi Buil, It is a great pleasure to offer a help! Hope your research goes well.
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