I am working on resistive switching devices, in the case of mim device fabrication, I am using silicon substrate and then use Al metal, then one insulator layer and then Al metal, but I can't understand how can i connect the 2nd probe to the bottom electrode for I-V measurements.
Hope I understood the question the right way...so you are able to contact the top electrode but somehow find yourself not able to access the bottom electrode, is it?
so,
1) Would be nice to see a photograph of your device, just to give you some practical suggestions that will workout for your experiments.
2) Anyways, usually when we fabricate a typical MIM device, the insulating/semiconducting material is usually deposited on a "patterned" bottom electrode. In your case, I assume you have a bottom electrode that`s patterned or you deposit Aluminium through a mask (it has some contact pads for bottom electrode access). What kind of switching materials do you use? (organic, inorganic...). If its organic, its easy to access the part of bottom electrode by removing that material with a tiny amount of solvents on a clean room swipe. If its inorganic..ooops..you may have to make sure you deposit the material through a mask so as to leave your bottom electrode exposed for probing.
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These papers have similar device (MIM) configuration but they have the representative fotos that can help you to visualize.
Hopeful this helps...:-)
Cheers
Yes, actually first i deposited Al on si substrate and then deposited insulating layers,and made pattern by photomask and then deposited Al as top electrode, so when we use the developer to remove photoresist, and then the top electrode contact it is ok, but how can i achieve the bottom contact i am really not find any answer@ Ram Kumar Balasubramanyam
Dear Mousri,
welcome,
You can deposit the bottom metal on the whole wafer, then deposit insulator on a part of the bottom metal and then deposit the top metal electrode on the the insulator only. In this way you can access the bottom metal from the uncovered part with the other two layers while you can access the top electrode as it is uncovered.
Best wishes
Actually this week we are trying to do this by using a tape which cover some area of the sample before sputtering, so we get a contact of bottom electrode, I hope this idea will work, let's see, thank you @ Abdelhalim Zekry
you can use crossbar structure to sandwich insulating layer between Al electrodes. you can look at our work for reference.
Dear Abdelhalim Dagar,
Your answer is perfectly right. But when we using this technique, for the bottom electrode the area is high, so the total resistance is huge. I hope that play a vital role in IV characteristics of MIM device. I think, for a bottom electrode also, we need a pattern ...
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