I need some help to solve this exercise, if possible.

we consider an n-doped amorphous silicon layer (silicon atomic density of 5e22/cm3) which displays a doping efficiency versus relative dopant concentration curve as displayed below. relative dopant concentration is given as the ratio of dopant atom density over silicon atomic density. the doping efficiency is the average number of charge carriers provided by one dopant atom at room temperature. this material has a dopant atom density of 5e19 /cm3, and an electron mobility of 0.5 cm2/vs.

what is the sheet resistance (rsheet, defined by resistivity divided by thickness) of a film of this material with a thickness of 100 nm?