I am trying to deposit GMR stacks of Ta(5)/IrMn(8)/CoFe(2.5)/Cu(2.2)/CoFe(2)/NiFe(2)/Ta(5) (in nm). I have only 2 target spots available. I was wondering if I can sputter in different steps first Ta(5)/IrMn(8) then CoFe(2.5)/Cu(2.2)/CoFe(2) and then NiFe(2)/Ta(5). Would this be appropriate? I guess I am worried that doing this would affect the final device properties. Any insight would be appreciated.
Every time you take out your samples constitutes an opportunity for water, oxygen or carbon oxides to adsorb or react. Therefore you will surely have a different final result in comparison with a direct in-vacuum deposition sequence and especially the reproducibility may be affected.
However, I would assume that most research institutions don't have sputterclusters with that many options, so most of them will probably do the same so your result may still be competitive.
Just cut the down the time to swap your targets. Don't take your substrate out. keep flushing your chamber with dry Nitrogen while changing your targets. There is no harm is trying with your existing equipment capability, and see the performance.
contamination of the surface will be the biggest issue...either chemisorption or physisorption.. layer formation will be there which will affect the results and as you wish to have very low scale deposition...this impurity effect will be very high....better you find out any collaborator with system having more target spots.
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