Is it possible to have different particle structures at different deposition powers under the same background gas pressure in RF Sputtering?
I am depositing Ni-cermet thin films of about 250nm on avg. thickness via RF sputtering at various sputtering powers of 50W-200W. The micro-structure for 50W Ni-cermet is rice like, for 100W it changes to granular, for 150 one can see a mix of granular and circular while for 200W the structure of the Ni-cermet is completely circular.
Can anyone please explain what is causing this phenomenon.
Much Appreciated
The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film
Some basic information in the reference: http://cdn.intechopen.com/pdfs/39143/InTech-Thin_film_growth_through_sputtering_technique_and_its_applications.pdf
Look up "A structure zone diagram including plasma-based deposition and ion etching" by Dr. Andre Anders. It is available this website but I don't know how to put a link to it from here. Dr. Anders has created a fantastic modified Thornton's diagram that links Particle Energy and Film Growth Energy to thickness and film structure.
All the above answers helped me understand the process of thin film deposition in more depth.
High appreciated.
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