We deposited ZnO on Si, and observed a thikening of interface SiOx when annealing morethan 500℃. I'd like to analize why this temperature is specific, I don't know how to describle it.
Dear Dr. Deca Liu ,
The phenomenon you observed—thickening of the SiOx interface when annealing ZnO on Si at temperatures exceeding 500°C — is intriguing and has important implications for semiconductor heterojunctions. Let’s explore the possible reasons behind this specific temperature threshold:
In summary, 500°C likely triggers a combination of diffusion, reactions, and structural changes, leading to the observed SiOx thickening. Investigating the specific mechanisms will provide deeper insights into this intriguing phenomenon.
For more detailed studies, consider referring to research articles on ZnO/Si heterojunctions and annealing effects:
Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes
- Sadia Muniza Faraz , Syed Riaz un Nabi Jafri , Hashim Raza Khan , Wakeel Shah , Naveed ul Hassan Alvi , Qamar ul Wahab and Omer Nur
From the journal Open Physics
https://doi.org/10.1515/phys-2021-0053
Article Study on interfacial interaction between Si and ZnO
Dear Dr. Deca Liu,
I agree with Dr. Len Sir's answer. He has given a very clear explanation. Additionally, you can refer to the research article by Z. Liu's group, which explains the possible reactions that can occur at the Si and ZnO interface during heat treatment.
Best regards,
Juhi
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