The lattice mismatch between Si and materials is, of course, different for every material. If you want epitaxial thin film growth, you may have to perform additional substrate preparation steps like including buffer layers depending on your film material.
Thank you Prof Jürgen Weippert for the clarification.
I have another query that what is the disadvantage or advantage of using metal substrate like Pt compared to Si in the terms of lattice mismatch of thin film material?
You have to check the lattice parameters, a lattice mismatch between materials is always defined pairwise. Saying that metal or Si would be better for all thin materials is an invalid statement.