Hi,
I am trying to understand why SU-8 areas only on top of LOR2A is getting damaged during lift-off process. LOR is patterned and being used as sacrificial layer. SU-8 is patterned on top of it. During metal lift-off using nLOF2070 (acetone + sonication) damages SU-8 areas just above LOR. Rest of the SU-8 areas sitting on top of SiO2 layer seems to be fine. Can anyone please help to understand what could be causing this?
Thanks a lot.
Cheers,
Abbin
Hello Abbin,
This lifting-off issue can happen for several reasons and for solving it, the fabrication process needs to be carefully analyzed. Please feel free to send me your detailed fabrication process so I can help.
Thanks Vaziri for responding.
By conducting multiple experiments, I have managed to fix the issue. The sonication power is the cause of damaging SU-8 layer on top of LOR2A. I was using 100W sonicator and when I use a low power sonicator (50W) SU-8 layer doesn't seems to damage.
During the metal layer lift-off, LOR tends to remove resist above it. As I need to protect LOR and SU-8 above it, I used acetone for lift-off process. During this process acetone reacts with LOR/SU-8 interface and this gets worse with long time exposure in acetone as well as high power sonication. By lower acetone exposure time and sonication power, I could finish lift-off process without damaging LOR and SU-8 layer.
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