How to develop a 50-um thick layer SU-8 2050 (MicroChem)?

More Isabela Aparecida de Araujo Andreotti's questions See All

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Cross Attention in Transformers: Standard applications of the same ?

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Is there an explanation of why a negative photoresist take-off after contact with ferric chloride (like in the pictures) ?

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how to minimise the heat effect on 2 micrometer hole drilled by femtosecond laser on SU8 photoresist ?

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Should I use a serum-free medium for IL-6/IL-8 measuring using the ELISA kits?

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How to evenly spin coat photoresist on a small sample of 3x3x1mm?

If direct spin coating can result in thick and wide range of edge beads, how can processing or other spin coating methods be used to avoid the appearance of large range of edge beads?

24 October 2023 5,778 6 View

Reza Abbasi

Make sure your Si wafer is super clean

Go for spin coating

Dispense 1 ml of resin for each inch (25mm) of substrate diameter.

spin coater: Spin at 500 rpm for 5-10 seconds with an acceleration of 100 rpm/second.

For su-8 2050: Spin at 2000 rpm for 30 seconds with the acceleration of 300 rpm/second.

Soft bake (65c: 5min, same hot plate go to 95c:22min)

Exposure: 45-50 s (it really depends on your source of UV)

PEB (65c: 1 min 95c:10 min), while on 95 hotplates adjust the other plate (65c one) to 120-130c so you can use it later for hard bake if you want to do a hard bake.

Let your wafer cool down before developing.

Develop, around 3 minutes.

Rinse with IPA (no water!), if you see white residues=underdeveloped-> go back to the developer and develop for 5-10 seconds, and rinse with IPA again until no white residues show up.

Dry with N2 (no water rinse or hotplate dehydration)

Isabela Aparecida de Araujo Andreotti

Hello Reza, thank you very much!! I'm going to test this protocol this week and bring the feedback :) Wish me luck!!