In all literature which interesting in DSSC using ZnO as a photoelectrod. I see that binding energy of ZnO approx. 60mev. I feel that it is indicator, but I can't explain why?
I am not sure specifically about ZnO, but in general the exciton binding energy is a loss you will have to pay in potential in order to separate the charges in your cell. ZnO has a rather high dielectric constant and can support easily free charge carriers.
However, to the best of my knowledge thermodynamic is not the accute problem with ZnO in DSSC, but rather the kinetic of the separation-recombination process which is more dominant.
Hope that helps
The high exciton binding energy in ZnO provides the thermal stability for excitons in solar cells so that device can work efficiently at room temperature. ZnO is used as elctron transport layer.
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