I am trying to fabricate back-gated CVD graphene devices using photolithography(ppr S1813). 

I have done aluminium deposition to dope graphene n-type and shift dirac point of p doped graphene. I deposited 2nm of aluminium on top of graphene. IV measurement showed saturated electron current, why is that happening?

is there any other effective way to shift dirac point in CVD graphene devices without introducing asymmetry in IV characteristics?

Why is IV curve  noisy?

PFA

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