I am trying to fabricate back-gated CVD graphene devices using photolithography(ppr S1813).
I have done aluminium deposition to dope graphene n-type and shift dirac point of p doped graphene. I deposited 2nm of aluminium on top of graphene. IV measurement showed saturated electron current, why is that happening?
is there any other effective way to shift dirac point in CVD graphene devices without introducing asymmetry in IV characteristics?
Why is IV curve noisy?
PFA
Dear friend, very interesting question. I am interested to your question and will explain in detail soon (similar to my case). A bit hurry for this time, please remind me.
However, the easiest way is searching the related document by typing the keywords into google scholar. You will find some related articles.
If yet to find the articles, do not hesitate to let me know. InsyaALLAH I will help you in detail.
Good luck. Dr Zol Bahri - Universiti Malaysia Perlis
- Badges
- Science topic
- Similar topics
- Physical Sciences
- Materials Science
- Materials
- Carbon Materials
- Graphite
- Graphene