I am working on fabrication of CVD graphene FET. I am using PPR S1813 photoresist for lithographic process. I want to know different methods by which PPR s1813 residues can be removed from graphene surface.
NMP and DMSO both remove novolak resin resists quite well. Both may need to be heated to get the final residue to dissolve. DMSO is considered safer than NMP, I'm not sure why, they both have similar boiling points, and auto ignition temps. Look at the MSDS before you use these of course. UV/Ozone or plasma may oxidize the graphene but they can also remove resist to the molecular level.
Ron Reiserer,
Can I get some reference material to read about how to use NMP and DMSO?
Microposit Remover 1165 is N-Methyl-2-pyrrolidone (NMP) - https://microchem.com/PDFs_Dow/Remover%201165%20Data%20Sheet%20R%26H.pdf
TechniStrip Micro D350 is dimethyl sulfoxide (DMSO) - http://www.microchemicals.eu/micro/msds/TF/Englisch/msds_en_technistrip_micro_d350.pdf
These are not the only strippers with these chemicals as their major components but these two in particular are nearly the pure solvents.
Ron Reiserver,
I was using chloroform to remove PMMA(EBL resist) residues from graphene, But I now I am using S1813 (photoresist) for lithography process. Can I use Chloroform to remove S1813 resist residues?
Chloroform does dissolve S1813, at least when it is not hard baked, so it's worth a try.
Instead of using only PR, it is better to use double layer i.e. first coat with lift-off resist (L-OR) and then with PR. In this case, the graphene surface will be very clear and free of PR. You do not need to be worry about removing PR residue. Be careful, for lift off you need to use L-OR remover (PG Remover) in this case, not acetone.
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