I used the Ar and N2 gas when depositing TiN.
So, I knew that Ar is stable and sputtering TiN was very well by only using Ar gas.
I wonder why we use N2 gas. Don't it need the N2 gas when sputtering TiN?
Dear Seo Shem,
Using another gas like N2 or O2 during deposition process is considered to be one of the traditional techniques for now to grow high quality films and keep the stoichiometry. In such case of using N2 besides Ar is to confirm quenching any Ti vacancies inside TiN structure. However, you have to precisely control N2 pressure to avoid Nitrogen vacancies as well.
you are trying to form a nitride compound, and therefore in order to from TiN, you need nitrogen gas.
Doing reactive sputtering of TiN, using a Ti target, and using Ar+ N2 is more convenient and controllable to form the desired TiN finish.
It is difficult to use a TiN target and using simple Ar. although it may give you TiN, but it is difficult to control the stoichiometry (Ti/N ratio).
Prof. K. Sreenivas
As Dr. Sreenivas said, it is difficult to control the stoichiometry using a TiN target. N2 gas is used to improve the stoichiometry by providing sufficient N2 on the film. You need to control the N2 flow rate in such case to avoid excess N2.
Using Ti target instead of TiN target is more convenient as Ti target is cheaper and the stoichiometry is more controllable.
Hi everybody i wants to use Nitrogen gas for sputtering deposition,,actually i dont know how much percentage of N2 gas i should use,can anybody tell me or give me any reference..
- Badges
- Science topic
- Similar topics
- Comment