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Questions related from Seo Shem
I deposited GeS2 material by using sputter. The conditions of the experiment that I used are as follow. Base Pressure: 1E-06 Torr (fixed) Gas Flow: Ar 50sccm (fixed) AC power: 25w (fixed)...
26 October 2018 7,245 0 View
Now, I'm analyzing the composition ratio of Cu8GeS6(Cu: 53 at%, Ge: 7 at%, S: 40 at%) varying the power, after using the sputtering deposition at following the base pressure, 9*10^-7Torr....
31 May 2018 5,884 5 View
I used the Ar and N2 gas when depositing TiN. So, I knew that Ar is stable and sputtering TiN was very well by only using Ar gas. I wonder why we use N2 gas. Don't it need the N2 gas when...
06 February 2018 5,213 6 View
Hi. I'm proceeding the graphene transfer on SiO2/Si directly, not using Al2O3 to increase the adhesion. The method that I used is as follow; 1) Spin coat the PMMA on the graphene on Cu foil...
02 December 2017 8,639 8 View