to the improvement serial resistance

There is an other alternative with CdZnTe as graded buffer layer to absorb the lattice mismatch and to improve HgCdTe layer growth.

Article HgCdTe/CdZnTe LPE epitaxial layers: From material growth to ...

Conference Paper Reutilization of CdZnTe substrate technology for HgCdTe IRFPA detector

Best regards

Dear Danmin Chen ,

Adding to Abderrahmane Kadri please refer to the paper in the following link:Article HgCdTe on Si: Present status and novel buffer layer concepts

Best wishes

Thank you very much Abdelhalim abdelnaby Zekry for your complementary info.

Respected sir, I need help in charge-discharge cycling for material which is having a concentration of 5mg in 1ml coated on Glassy carbon electrode 10 microliter having mass 0.00005 grams for this what current I should apply in charge-discharge cycling?

It's used for strain relaxation due to lattice mismatch and related BSF.

Hello Danmin Chen

I found that a buffer layer was not necessary on various surface orientations of GaAs.

Article Low temperature MOCVD of Hg1−xCdxTe on 311, 511, 711 and shaped GaAs