I have recently been looking into the use of combining atomic layer deposition of ZnO onto P3HT thin film layers.
I have found that when introducing these layers into thin film transistor devices that they produce ambipolar devices. I was wondering if anyone can explain how the charges move through the active bilayers in this device to produce this ambipolar nature?
Thanks!
Hi Jaspreet,
It sounds an interesting project. Possible explanation would be that it functions as a bilayer type OFET (or hybrid FET in this case) where ZnO and P3HT works as the electron and the hole conductor, respectively. See chapter 4.4 of the attached review. There might be other mechanism depending on your structure, though.
Article Electron and Ambipolar Transport in Organic Field-Effect Transistors
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