For resistive switching with device structure MIM (Metal/Insulator(basically oxide material)/Metal) which type of top electrode more suitable: with high work-function or low and why? Is it some how also depend upon the device structure (I mean which kind of oxide material I choose or bottom electrode)?
Schottky would mean that you would need to apply enough voltage to overcome the Schottky barrier. I think Ohmic contact is the simple solution. I'm not sure what benefits you may get from using a schottky barrier.
It depends on what mechanism you want for resistive switching in your device. In interface type of mechanism for resistive switching, one metal-insulator interface will schottky and the interface of other contact with insulator will be ohmic.
The high resistance state of device will be determined by the barrier height at the schottky interface. Barrier height of this interface can be modified by applying a suitable potential at contact forming ohmic interface. Hence resistance state of device can be controlled by potential applied at contact forming ohmic interface.
Below article will give more insights
Article Nonvolatile resistive switching memories - characteristics, ...
@Ryan..Thanks for your answer. Actually Schottky contact is more suitable for larger switching window but there are lots of report in which they used Ohmic contact. Also I am new in this field so I am little-bit confused!!
@Pritam..Thank you very much for your valuable information. The attached article is quite helpful for me.
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