For a long time I have been facing a problem in understanding. I am working on synthesis of aligned nanorods by RF sputtering. I studied a paper entitled "Enhancement of photoelectrochemical response by aligned nanorods" by KWANG-SOON AHN and coworkers. In this paper it is mentioned that for the ZnO nanorods synthesis the ambient of nitrogen is necessary. Without nitrogen only ZnO thin film is produced.
Can anyone explain to me the actual role of nitrogen in ZnO nanorods synthesis during RF sputtering? You can get the paper in the attachment.
Thank you
dear Iqbal
I know this difference... but till now no get the answer for one year
I worked on Zinc oxide (ZnO) by Atmospheric Pressure Chemical- Vapor Deposition (APCVD) technique, .Argon and nitrogen gases were checked as a carrier gases after analysis the samples we see that the properties of sample when using N2 as a carrier gas different when using Ar is as a carreir gas by using FESEM,EDX ,FTIR and XRD in FTIR spectra
the area under the curve of the Si-O-Si stretching vibration increased when Ar is used as a carrier gas instated of N2 ,this means number of bonding of Si-O increased
Introducing a small amount of N2 to the sputtering atmosphere enhances adatom migration, leading to a larger grain size in the ZnO films associated with an increase in the lateral correlation length (Iping Suhariadi et al 2013 Jpn. J. Appl. Phys. 52 11NB03. doi:10.7567/JJAP.52.11NB03)
Thank you shah Anwer Kakil ..and Writam Banerjee
Will you tell me that did you noticed the ZnO nanorods when you used the N2 as a carrier gas,
Writam Banerje! what is the effct of increase in the lateral correlation length on the production of ZnO nanorods,,as i am sorry to say that i could not understand your answer exactly
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