Dear all,
I want to grow SiO2 on Stainless steel thin film by sputtering. After annealing, there is diffusion of the substrate to SiO2. I'd would like to ask if anyone has experience with this issue. If so, how do you recommend controlling the quality of SiO2 during the deposition. I should say, I used O2 during the deposition but the quality of the SiO2 was not really good.
Thanks for your time,
Parsa
Is it necessary to do annealing (in your work) after deposition of silicon dioxide by sputtering? If you can mention the reason for post-deposition annealing, the answer to your question may become simpler. You may contact me at: [email protected];
Sudhir Chandra, Professor, IIT Delhi
We generally use reactive O2 gas with a Si target in a PVD Chamber. I beleieve that you would also find many examples of doing that with CVD.
thank you so much. I will try to using your suggestion and I will let you know the results.
Dear all,
I deposit Si2O by RF. the power was 100 and I apply O2 with 12cc/min during the deposition. then I annealed at 800'c for 10 hours and I got Si2O layer with high quality. I write this Msg to let you know the result. I hope, it can be useful for all of them.
thank you so much for your helps and your recommends.
All the best
Forming a clear SiO2 phase demands high temperatures which ever technique you use (either insitu while depositing) or post deposition annealing.
1) If you just want an insulating coating on your stainless steel, simplest way is to thermally evaporate Silicon monoxide in a special baffled boat, and this can be purlchased from RD mathais company in USA. Some substrate temperature will provide good adhesion. But remember getting the SiO2 phase is difficult. You ma get SiO2-x, I mean some oxygen deficiency.
2) You can do electron beam evaporation using SiO2 pellets, again some substrate temperature will be useful
3) Finally The best way, and the most cited and well respected work published in the literature says deposition of semiconductor grade SiO2 films has been achieved by depositing SiO2 films using the ECR technique at around 450 C.
4) You can always glue a Si wafter onto a copper blank using silver paste specially available for bonding sputtering targets, and sputtering AR+O2 atmosphere, and obtain SiO2 films.
Prof. K. Sreenivas
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