Can anyone suggest me an equivalent circuit for (CdS thin film/Na2S2O3/Pt) photoelectrochemical cell? CdS thin film is deposited on FTO glass and used as the working electrode. Pt electrode was used as the counter electrode and Ag/AgCl as a reference. Observed Nyquist plot and Bode plot are attached herewith. I have simulated some equivalent circuits such as [R(RC)], [R(RQ)], etc. But the right side bend of the phase curve in the bode diagram didn't match with any of I tried.
Thank you.
The normal equivalent circuit is R(RC).
You would better to change the bias voltage. Also try with dark as well as light condition for the experiment. But preferred dark conditions.
Also you can try with two prob method by conecting reference and counter probes together on counter electrode.
You can find a simler work on
10.1016/j.matchemphys.2017.07.052
Dear Isuru Lakmal ,
the very simple R(RC) ECM (equivalent circuit model) is valid (only) at the (far) forward bias regime, both under:
1)dark [R(RC)]dark, as well as under varying
2)illumination(s)[1] [R(RC)]L_Fluxes
conditions.
In reverse bias (regime), (ECM) things are more rich (and complex); but things seem to be much more interesting, as a materials' (and device's parameters) science tool.
So, in reverse bias, try the, quite good, ECM "R(R1Q1)(R2Q2)", both under dark and under[1] illumination(s).
1. Avoid heating (by cooling the substrate, ...) under very high illumination fluxes.
Dear Ioannis Samaras ,
Thank you sir for your valuable information. Still, I haven't tried under illumination and I'll try that way also. As you mentioned, I also want to take those results as a good material science tool without limiting into common equivalent circuit models (ECM).
While I'm fitting for different ECMs, I have found one model which was matched for all of my samples and attached herewith. But it consists of parallel constant phase element couples which I can't explain. If you have any suggestions, please let me know.
My ultimate goal is to have a better idea about what's really going on inside the semiconductor layers.
I think that you can to develp such equivalent circuit if you will read my papers, coonected with my modelling method.
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